SCT070HU120G3AG
HU3PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Silicon Carbide MOSFET, part number SCT070HU120G3AG, offers a 1200 V drain-source voltage and 30 A continuous drain current at 25°C (Tc). This device features a low on-resistance of 87 mOhm at 15 A and 18 V, with a gate charge of 37 nC at 18 V. Designed for high-efficiency power conversion applications, it is rated for a maximum power dissipation of 223 W (Tc). The SCT070HU120G3AG utilizes Silicon Carbide technology and is housed in a surface mount HU3PAK (TO-263-8, D2PAK) package, supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). This component is qualified to AEC-Q101, making it suitable for automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 223W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | HU3PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 850 V |
| Qualification | AEC-Q101 |
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