SCT070H120G3AG
H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SCT070H120G3AG is a 1200V N-Channel SiCFET housed in an H2PAK-7 package. This device offers a continuous drain current of 30A (Tc) and a maximum power dissipation of 223W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 1200V, Rds On (Max) of 87mOhm @ 15A, 18V, and a gate charge (Qg) of 37 nC @ 18 V. Input capacitance (Ciss) is specified at 900 pF @ 850 V. The operating temperature range is -55°C to 175°C (TJ). Designed for demanding applications, this component is qualified to AEC-Q101 and is suitable for automotive-grade requirements. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 223W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 850 V |
| Qualification | AEC-Q101 |
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