SCT060HU75G3AG
AUTOMOTIVE-GRADE SILICON CARBIDEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Silicon Carbide Junction Transistor, part number SCT060HU75G3AG, offers robust performance for demanding applications. This 750 V device features a continuous drain current of 30A (Tc) and a maximum power dissipation of 185W (Tc). The SCT060HU75G3AG is housed in a HU3PAK surface mount package, specifically TO-263-8, D2PAK (7 Leads + Tab), TO-263CA. Key electrical specifications include a maximum Rds On of 78mOhm at 15A and 18V, with a gate charge of 29 nC @ 18 V and input capacitance of 680 pF @ 400 V. Operating across an extended temperature range of -55°C to 175°C (TJ), this component is well-suited for automotive and industrial power conversion systems. The Digi-Reel® packaging ensures efficient handling in automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | HU3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | 4.2V @ 1mA |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 400 V |
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