SCT055W65G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel SiCFET, part number SCT055W65G3-4AG, offers a 650V drain-source voltage with a continuous drain current of 30A (Tc) at 25°C. This through-hole TO-247-4 packaged device features a maximum on-resistance of 72mOhm at 15A, 18V, and a gate charge of 32nC at 18V. With a power dissipation of 210W (Tc) and an operating temperature range of -55°C to 200°C, it is qualified to AEC-Q101 standards, making it suitable for automotive applications. The input capacitance (Ciss) is a maximum of 721pF at 40V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 721 pF @ 40 V |
| Qualification | AEC-Q101 |
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