SCT055HU65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics' SCT055HU65G3AG is a 650V N-Channel Silicon Carbide FET. This component features a low on-resistance of 72mOhm at 15A and 18V, with a continuous drain current capability of 30A at 25°C (Tc). The device is rated for a maximum power dissipation of 185W (Tc) and operates across an extended temperature range of -55°C to 175°C (TJ). Presented in an HU3PAK surface mount package, it is suitable for demanding applications. The SCT055HU65G3AG is AEC-Q101 qualified, indicating its suitability for automotive environments. Key electrical characteristics include a Vgs(th) of 4.2V at 1mA, and gate charge (Qg) of 29 nC at 18V. Input capacitance (Ciss) is 721 pF at 400V. This STMicroelectronics SiCFET is designed for high-efficiency power conversion in automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | HU3PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 721 pF @ 400 V |
| Qualification | AEC-Q101 |
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