SCT040W120G3AG
HIP-247 IN LINE HEAT SINK 2MMManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' SCT040W120G3AG is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This device offers a 1200V drain-source voltage and a continuous drain current of 40A at 25°C (Tc), with a maximum power dissipation of 312W (Tc). The SCT040W120G3AG features a low on-resistance of 54mOhm at 16A and 18V (Vgs), and a typical gate charge of 56 nC at 18V. Its TO-247-3 package with a HiP247™ thermal interface is suitable for through-hole mounting. Designed for automotive applications and qualified to AEC-Q101, this MOSFET operates across a wide temperature range of -55°C to 200°C (TJ). The technology employed is Silicon Carbide Junction Transistor, supporting gate voltages up to +22V and down to -10V, with a threshold voltage of 4.2V at 5mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | HiP247™ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
| Qualification | AEC-Q101 |
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