SCT040W120G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel Silicon Carbide MOSFET, SCT040W120G3-4AG, offers 1200V drain-source voltage and 40A continuous drain current at 25°C. This through-hole device features a low on-resistance of 54mOhm at 16A, 18V, and a maximum gate charge of 56nC at 18V. Designed for demanding applications, it dissipates up to 312W and operates across a wide temperature range of -55°C to 200°C. The TO-247-4 package facilitates efficient thermal management. This AEC-Q101 qualified component is suitable for automotive applications and power conversion systems requiring high voltage and current handling capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
| Qualification | AEC-Q101 |
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