SCT040HU65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics' N-Channel SiCFET, part number SCT040HU65G3AG, is a 650 V device featuring a continuous drain current of 30A (Tc) and a maximum power dissipation of 221W (Tc). This automotive-grade component, manufactured using Silicon Carbide technology, offers a low on-resistance of 55mOhm @ 20A, 18V. Key electrical specifications include a drain-to-source voltage (Vdss) of 650 V, a gate charge (Qg) of 39.5 nC @ 18 V, and an input capacitance (Ciss) of 920 pF @ 400 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in a HU3PAK package, suitable for surface mounting. The SCT040HU65G3AG is AEC-Q101 qualified and is utilized in demanding automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 221W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | HU3PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
| Qualification | AEC-Q101 |
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