SCT040H65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Silicon Carbide (SiC) MOSFET, part number SCT040H65G3AG, offers a 650V drain-source voltage rating and 30A continuous drain current capability at 25°C (Tc). This AEC-Q101 qualified component is designed for demanding automotive applications. Featuring a low on-resistance of 55mOhm (max) at 20A and 18V, it achieves this with a gate voltage range of up to 18V. The device boasts a gate charge (Qg) of 39.5 nC (max) and input capacitance (Ciss) of 920 pF (max). Packaged in an H2PAK-7 (TO-263-8, D2PAK) surface mount configuration, it supports a maximum power dissipation of 221W (Tc) and operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 221W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
| Qualification | AEC-Q101 |
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