SCT040H120G3AG
H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Silicon Carbide (SiC) MOSFET, part number SCT040H120G3AG, delivers robust performance with a 1200 V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). This device features a low on-resistance of 54mOhm at 16A and 18V Vgs, with a maximum power dissipation of 300W (Tc). Designed for demanding applications, it is housed in an H2PAK-7 (TO-263-8, D2PAK) surface mount package, facilitating efficient thermal management. The SCT040H120G3AG boasts key parameters including a maximum gate charge (Qg) of 54 nC at 18 V and input capacitance (Ciss) of 1329 pF at 800 V. Its automotive grade qualification (AEC-Q101) and operating temperature range of -55°C to 175°C (TJ) make it suitable for automotive power systems, industrial motor drives, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
| Qualification | AEC-Q101 |