SCT027W65G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCT027W65G3-4AG is a 650V N-Channel Silicon Carbide Power MOSFET housed in a TO-247-4 package. This device offers a continuous drain current of 60A at 25°C (Tc) and a maximum power dissipation of 313W (Tc). Key electrical characteristics include a maximum Rds(on) of 39.3mOhm at 30A and 18V, with an input capacitance (Ciss) of 1229pF at 400V. Gate charge (Qg) is specified at a maximum of 51nC at 18V. The operating temperature range is -55°C to 200°C (TJ). This component is qualified to AEC-Q101, making it suitable for automotive applications. It is designed for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 39.3mOhm @ 30A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1229 pF @ 400 V |
| Qualification | AEC-Q101 |
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