SCT025W120G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel Silicon Carbide MOSFET, part number SCT025W120G3-4AG, offers exceptional performance for demanding applications. This device features a 1200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 56A at 25°C, with a maximum power dissipation of 388W. The N-channel FET is housed in a TO-247-4 through-hole package, facilitating robust thermal management. Key electrical parameters include a maximum on-resistance (Rds On) of 37mOhm at 25A and 18V, and a gate charge (Qg) of 73 nC at 18V. With a junction temperature range of -55°C to 200°C and AEC-Q101 qualification, this component is designed for high-reliability automotive applications, including electric vehicle powertrains and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 25A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 388W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 800 V |
| Qualification | AEC-Q101 |
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