SCT018W65G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Power MOSFET, part number SCT018W65G3-4AG, is designed for high-performance applications. This device offers a 650V drain-to-source voltage (Vdss) and a continuous drain current of 55A at 25°C (Tc), with a maximum power dissipation of 398W (Tc). Featuring a low on-resistance (Rds On) of 27mOhm at 30A and 18V, it utilizes STMicroelectronics' advanced MOSFET technology. The SCT018W65G3-4AG is housed in a TO-247-4 package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 77 nC at 18V and input capacitance (Ciss) of 2077 pF at 400V. This component is AEC-Q101 qualified, indicating its suitability for demanding automotive environments. Its operating temperature range is -55°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 30A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 398W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2077 pF @ 400 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP7LN80K5
MOSFET N-CH 800V 5A TO220
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
