SCT018H65G3AG
H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCT018H65G3AG is a 650V N-Channel Silicon Carbide Power MOSFET designed for demanding applications. This device, qualified to AEC-Q101 for automotive use, features a low on-resistance of 27mOhm at 30A and 18V, enabled by its advanced SiCFET technology. With continuous drain current capability of 55A at 25°C and a maximum power dissipation of 385W, it is suitable for high-power switching applications. The SCT018H65G3AG is housed in an H2PAK-7 surface mount package, offering efficient thermal management. Key parameters include a gate charge of 79.4 nC at 18V and input capacitance of 2124 pF at 400V. The operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive power systems, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 30A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 385W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 79.4 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2124 pF @ 400 V |
| Qualification | AEC-Q101 |
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