SCT015W120G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SCT015W120G3-4AG is a high-performance N-Channel Silicon Carbide power MOSFET. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 129 A at 25°C. The TO-247-4 package facilitates through-hole mounting and offers a maximum power dissipation of 673 W. Key parameters include a low on-resistance (Rds On) of 17.5 mOhm at 60 A and 18 V, and a maximum gate charge (Qg) of 167 nC at 18 V. Input capacitance (Ciss) is 3512 pF at 800 V. Designed for demanding applications, this MOSFET operates across a wide temperature range of -55°C to 200°C. The SCT015W120G3-4AG is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 60A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 673W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3512 pF @ 800 V |
| Qualification | AEC-Q101 |
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