SCT012H90G3AG
H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel SiCFET, part number SCT012H90G3AG, offers 900V drain-source breakdown voltage and 110A continuous drain current at 25°C (Tc). This device features a low on-resistance of 15.8mOhm at 60A and 18V (Vgs). The maximum power dissipation is 625W (Tc). With a gate charge of 138nC (max) at 18V and input capacitance of 3880pF (max) at 600V (Vds), it is designed for efficient switching. The H2PAK-7 surface mount package is suitable for demanding applications. This component is qualified to AEC-Q101 and is utilized in automotive power systems and industrial power supplies. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 60A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3880 pF @ 600 V |
| Qualification | AEC-Q101 |
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