IRFP250
MOSFET N-CH 200V 33A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' IRFP250 is an N-Channel Power MOSFET from the PowerMESH™ II series. This through-hole component, packaged in a TO-247-3, offers a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 33 A at 25°C. The device features a maximum on-resistance (Rds On) of 85 mOhm at 16 A and 10 V, with a gate charge (Qg) of 158 nC at 10 V. Maximum power dissipation is rated at 180 W (Tc). This MOSFET is suitable for applications in industrial and power supply sectors.
Additional Information
Series: PowerMESH™ IIRoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 25 V |
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