IRF640FP
MOSFET N-CH 200V 18A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics IRF640FP is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 18A at 25°C, with a maximum power dissipation of 40W. The Rds On is specified at a maximum of 180mOhm at 9A and 10V gate drive. With a gate charge (Qg) of 72nC at 10V and input capacitance (Ciss) of 1560pF at 25V, this MOSFET offers robust performance characteristics. The device operates at junction temperatures up to 150°C and is housed in a TO-220FP package for through-hole mounting. Its technology utilizes Metal Oxide fabrication. The IRF640FP is commonly employed in power supply units, motor control circuits, and general-purpose power switching applications across various industrial sectors.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V |
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