IRF640
MOSFET N-CH 200V 18A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics IRF640 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) capability of 18A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 180mOhm maximum at 9A and 10V Vgs, it minimizes conduction losses. The device has a maximum power dissipation of 125W (Tc) and an operating junction temperature of 150°C (TJ). Key parameters include a 72nC gate charge (Qg) at 10V Vgs and an input capacitance (Ciss) of 1560pF maximum at 25V Vds. It is packaged in a TO-220AB through-hole configuration, suitable for industrial and automotive power control systems.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V |
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