IRF630FP
MOSFET N-CH 200V 9A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics IRF630FP is an N-Channel Power MOSFET from the MESH OVERLAY™ II series, packaged in a TO-220FP configuration. This device offers a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 9 A at 25°C. With a maximum power dissipation of 30 W (Tc), it features a low on-resistance (Rds On) of 400 mOhm at 4.5 A and 10 V. Key characteristics include a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 700 pF at 25 V. The operating temperature range is -65°C to 150°C. This component is suitable for applications in power supply and motor control sectors.
Additional Information
Series: MESH OVERLAY™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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