BUZ10
MOSFET N-CH 50V 23A TO220ABManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics BUZ10, an N-Channel power MOSFET from the STripFET™ series, offers robust performance for demanding applications. This through-hole component, housed in a TO-220AB package, features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 23A at 25°C (Tc). With a maximum power dissipation of 75W (Tc) and a low Rds On of 70mOhm at 14A and 10V gate drive, the BUZ10 ensures efficient operation. Its input capacitance (Ciss) is 900 pF at 25V. This device is suitable for use in industrial automation, power supply, and automotive sectors. The operating junction temperature range extends to 175°C. The BUZ10 supports a gate-source voltage (Vgs) range of +/-20V, with a threshold voltage (Vgs(th)) of 4V at 1mA.
Additional Information
Series: STripFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD140N6F7
MOSFET N-CH 60V 80A DPAK
