STTH1210G
DIODE GEN PURP 1KV 12A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STTH1210G is a fast recovery diode designed for general-purpose applications. This TO-263-3, D2PAK (TO-263AB) packaged device features a 1000 V reverse voltage (Vr) and a maximum forward voltage (Vf) of 2 V at 12 A. With an average rectified current (Io) of 12 A, it exhibits a reverse leakage current of 10 µA at 1000 V. The diode operates efficiently with a reverse recovery time (trr) of 90 ns, falling within the fast recovery category. Its surface mount capability and a maximum junction operating temperature of 175°C make it suitable for demanding applications. This component finds utility in power supplies, automotive electronics, and industrial control systems. The STMicroelectronics STTH1210G is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 90 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 12 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |