STPSC8H065G-TR
DIODE SIL CARBIDE 650V 8A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC8H065G-TR is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power switching applications. This component features a 650 V reverse voltage rating and a continuous average forward current capability of 8 A. The forward voltage (Vf) is specified at a maximum of 1.75 V at 8 A, and the reverse leakage current is a low 80 µA at 650 V. With a junction operating temperature range of -40°C to 175°C, it offers robust performance in demanding environments. Key characteristics include a capacitance of 414 pF at 0 V and 1 MHz, and a notable "No Recovery Time > 500mA (Io)" speed rating, indicative of its SiC Schottky technology. The STPSC8H065G-TR is supplied in a TO-263-3, D2PAK package suitable for surface mounting and is delivered on tape and reel (TR). This device is commonly employed in power factor correction, solar inverters, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 414pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
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