STPSC806D
DIODE SIL CARB 600V 8A TO220ACManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC806D is a SiC Schottky diode designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220AC package, offers a maximum DC reverse voltage of 600V and a continuous average rectified current of 8A. Its forward voltage drop at 8A is a maximum of 1.7V, contributing to reduced power loss. The diode exhibits a reverse leakage current of 100 µA at 600V and a capacitance of 450pF at 0V, 1MHz. Notably, it features no reverse recovery time above 500mA, making it ideal for high-frequency switching. The STPSC806D operates across a junction temperature range of -40°C to 175°C. This device finds utility in demanding sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 450pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
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