STPSC6H065G-TR
DIODE SIL CARBIDE 650V 6A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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The STMicroelectronics STPSC6H065G-TR is a Silicon Carbide (SiC) Schottky diode featuring a 650 V reverse voltage rating and a 6 A average rectified current capability. This surface mount component, housed in a TO-263-3, D2PAK package, offers a maximum forward voltage of 1.75 V at 6 A. Its design emphasizes zero reverse recovery time (trr), a critical characteristic for high-frequency switching applications. The diode exhibits a low reverse leakage current of 60 µA at 650 V and a capacitance of 300 pF at 0 V and 1 MHz. Operating across a junction temperature range of -40°C to 175°C, this device is suitable for power factor correction, inverters, and power supplies within the automotive and industrial sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 6 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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