STPSC406D
DIODE SIL CARB 600V 4A TO220ACManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC406D is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component offers a maximum DC reverse voltage of 600V and an average rectified forward current capability of 4A. Its key characteristic is the absence of reverse recovery time (trr = 0 ns) for currents greater than 500mA, significantly reducing switching losses. The forward voltage drop (Vf) is a maximum of 1.9V at 4A. Leakage current at 600V is rated at 50 µA. The device operates across a wide junction temperature range of -40°C to 175°C and is housed in a TO-220AC package. This SiC diode is well-suited for use in automotive, industrial power supplies, and solar inverters where high efficiency and performance are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 200pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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