Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

STPSC30G12WLY

Banner
productimage

STPSC30G12WLY

AUTOMOTIVE 1200 V, 30 A SILICON

Manufacturer: STMicroelectronics

Categories: Single Diodes

Quality Control: Learn More

STMicroelectronics STPSC30G12WLY is a 1200V, 30A Silicon Carbide (SiC) Schottky diode designed for demanding automotive applications. This Through Hole component, housed in a TO-247-2 package (DO-247 LL), offers a low forward voltage of 1.5V at 30A and a reverse leakage of 225 µA at 1200V. With a junction operating temperature range of -55°C to 175°C and AEC-Q101 qualification, it meets stringent automotive reliability standards. The device features fast recovery characteristics, suitable for high-efficiency power conversion in electric vehicle powertrains, onboard chargers, and advanced driver-assistance systems. Its 2272pF capacitance at 0V and 1MHz is a key parameter for high-frequency switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F2272pF @ 0V, 1MHz
Current - Average Rectified (Io)30A
Supplier Device PackageDO-247 LL
Operating Temperature - Junction-55°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 30 A
Current - Reverse Leakage @ Vr225 µA @ 1200 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STTH3012WL

DIODE GP 1.2KV 30A DO247 LL

product image
STBR6012W

DIODE GEN PURP 1.2KV 60A DO247

product image
STTH30RQ06W

DIODE GEN PURP 600V 30A DO247