STPSC20H12G2Y-TR
DIODE SIL CARB 1.2KV 20A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC20H12G2Y-TR is a Silicon Carbide (SiC) Schottky diode with a 1200V reverse voltage rating and a 20A average forward current. This device features a low forward voltage of 1.5V at 20A and a minimal reverse leakage of 120 µA at 1200V. The capacitance at 0V and 1MHz is 1650pF. Designed for high-temperature operation up to 175°C, it is housed in a TO-263-3, D2PAK (2 Leads + Tab) package for surface mounting and supplied on tape and reel. Qualifying for AEC-Q101, this diode is suitable for automotive applications, including power supplies, motor control, and electric vehicle charging systems, leveraging its fast switching characteristics and low losses inherent to SiC technology.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1650pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | D2PAK HV |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 1200 V |
| Qualification | AEC-Q101 |
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