STPSC20G12WL
1200 V, 20 A HIGH SURGE SILICONManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC20G12WL is a 1200 V, 20 A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-2 package (DO-247 LL), offers a forward voltage (Vf) of 1.5 V at 20 A and a reverse leakage current of 150 µA at 1200 V. With a junction operating temperature range of -55°C to 175°C, it exhibits a capacitance of 1548pF at 0V and 1MHz. The STPSC20G12WL is designed for applications requiring high surge capability and fast switching, commonly found in power factor correction (PFC) and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1548pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-247 LL |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 1200 V |
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