STPSC20065W
DIODE SIL CARBIDE 650V 20A DO247Manufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC20065W, a Silicon Carbide Schottky diode, offers superior performance in demanding applications. This device features a 650V reverse voltage rating and an average rectified forward current capability of 20A. The forward voltage drop (Vf) is a maximum of 1.45V at 20A, and it exhibits a negligible reverse leakage current of 300 µA at 650V. Engineered with SiC technology, it boasts a zero reverse recovery time (trr) for switching speeds exceeding 500mA. The STPSC20065W is housed in a DO-247-2 package with straight leads, designed for through-hole mounting. Its operating junction temperature range is -40°C to 175°C. This component is suitable for power factor correction, output rectification, and solar inverters, among other high-efficiency power conversion systems. It is part of the ECOPACK®2 series.
Additional Information
Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | DO-247-2 (Straight Leads) |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1250pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-247 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 20 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 650 V |
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