STPSC16H065AW
DIODE SIL CARB 650V 16A TO247-3Manufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics presents the STPSC16H065AW, a Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650 V and a rectified forward current (Io) of 16 A. It features a typical forward voltage (Vf) of 1.75 V at 16 A and exhibits minimal reverse leakage of 140 µA at 650 V. The STPSC16H065AW boasts a junction operating temperature range of -40°C to 175°C and a capacitance of 750 pF at 0 V and 1 MHz. Notably, this device demonstrates no reverse recovery time above 500 mA (Io). The ECOPACK®2 series designation signifies its environmentally friendly packaging. This SiC diode is suitable for applications in power factor correction, inverters, and power supplies across industrial and automotive sectors.
Additional Information
Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 750pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 16 A |
| Current - Reverse Leakage @ Vr | 140 µA @ 650 V |
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