STPSC12065G-TR
DIODE SIL CARBIDE 650V 12A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC12065G-TR is a 650V, 12A Silicon Carbide (SiC) Schottky diode in a D2PAK surface mount package. This ECOPACK®2 series component features a maximum forward voltage (Vf) of 1.45V at 12A and a remarkably low reverse leakage current of 150 µA at 650V. Its SiC technology delivers zero reverse recovery time for currents greater than 500mA (Io), contributing to enhanced system efficiency. The operating junction temperature range is -40°C to 175°C. This device is suitable for high-voltage power conversion applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 750pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 650 V |
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