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STPSC10H12G2Y-TR

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STPSC10H12G2Y-TR

DIODE SIL CARB 1.2KV 10A D2PAK

Manufacturer: STMicroelectronics

Categories: Single Diodes

Quality Control: Learn More

STMicroelectronics STPSC10H12G2Y-TR is an ECOPACK®2 series Silicon Carbide (SiC) Schottky diode. This component offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 10 A. It features a low forward voltage drop of 1.5 V at 10 A and a minimal reverse leakage current of 60 µA at 1200 V. The device exhibits a capacitance of 725 pF at 0 V and 1 MHz. Designed for high-temperature operation, it has a junction operating temperature range of -40°C to 175°C. The STPSC10H12G2Y-TR is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It is AEC-Q101 qualified and meets the Automotive grade requirements. The diode's advanced SiC technology provides virtually zero reverse recovery time. This component is commonly utilized in automotive and industrial power applications.

Additional Information

Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F725pF @ 0V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageD2PAK HV
Operating Temperature - Junction-40°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 10 A
Current - Reverse Leakage @ Vr60 µA @ 1200 V
QualificationAEC-Q101

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