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STPSC10H12G2-TR

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STPSC10H12G2-TR

DIODE SIL CARB 1.2KV 10A D2PAK

Manufacturer: STMicroelectronics

Categories: Single Diodes

Quality Control: Learn More

STMicroelectronics STPSC10H12G2-TR is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This ECOPACK®2 series component offers a maximum reverse voltage of 1200 V and an average rectified current capability of 10 A. The forward voltage drop is a maximum of 1.5 V at 10 A, with a reverse leakage current of 60 µA at 1200 V. Featuring zero reverse recovery time, this device is suitable for demanding power switching applications. The STPSC10H12G2-TR is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, specified for operation between -40°C and 175°C junction temperature. Its capacitance at 0V and 1MHz is 725pF. This diode is utilized in power factor correction, solar inverters, and electric vehicle charging infrastructure. The component is supplied in Tape & Reel packaging.

Additional Information

Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F725pF @ 0V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageD2PAK HV
Operating Temperature - Junction-40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 10 A
Current - Reverse Leakage @ Vr60 µA @ 1200 V

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