STPSC10H12G-TR
DIODE SIL CARB 1.2KV 10A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC10H12G-TR is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This ECOPACK® series component features a 1200 V reverse voltage rating and a 10 A average rectified forward current capability. The diode exhibits a low forward voltage drop of 1.5 V at 10 A and a reverse leakage current of only 60 µA at its maximum reverse voltage. With a junction operating temperature range of -40°C to 175°C, it is suitable for demanding environments. The STPSC10H12G-TR utilizes a D2PAK (TO-263-3) surface mount package and is supplied on tape and reel. Its SiC technology offers significantly reduced switching losses and faster switching speeds, making it ideal for power factor correction, solar inverters, and industrial power supplies. The device boasts a zero reverse recovery time.
Additional Information
Series: ECOPACK®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 725pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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