STPSC10H065G-TR
DIODE SIL CARBIDE 650V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC10H065G-TR is a 650V, 10A Silicon Carbide (SiC) Schottky diode in a D2PAK surface mount package. This component offers a forward voltage (Vf) of 1.75V at 10A, with a reverse leakage of 100 µA at 650V. The STMicroelectronics STPSC10H065G-TR features zero reverse recovery time above 500mA (Io), contributing to high efficiency in power conversion applications. Its operating junction temperature range is -40°C to 175°C. This device is commonly utilized in high-voltage power supply, motor drive, and solar inverter applications. The part is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 480pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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