STPSC1006G-TR
DIODE SIL CARBIDE 600V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
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STMicroelectronics STPSC1006G-TR is a 600V, 10A Silicon Carbide Schottky diode in a D2PAK package. This surface mount component features a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 150µA at 600V. Its operating junction temperature range is -40°C to 175°C. The device exhibits no reverse recovery time above 500mA, making it suitable for high-frequency switching applications. Capacitance is specified at 650pF at 0V and 1MHz. This diode is commonly utilized in power factor correction, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 650pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 600 V |
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