STPSC1006D
DIODE SIL CARB 600V 10A TO220ACManufacturer: STMicroelectronics
Categories: Single Diodes
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The STMicroelectronics STPSC1006D is a 600V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component features a TO-220AC package, offering a maximum forward voltage (Vf) of 1.75V at 10A. Its specified reverse leakage current is 300 µA at 600V. The STPSC1006D exhibits no significant reverse recovery time above 500mA (Io), characteristic of SiC Schottky technology. This device operates across a junction temperature range of -40°C to 175°C and has a capacitance of 650pF at 0V and 1MHz. It is commonly utilized in power factor correction, solar inverters, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 650pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 600 V |