STPSC10065G2-TR
DIODE SIL CARBIDE 650V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single Diodes
Quality Control: Learn More
STMicroelectronics STPSC10065G2-TR is a 650V, 10A Silicon Carbide (SiC) Schottky diode in a TO-263-3, D2PAK package. This ECOPACK®2 series component features a low forward voltage drop of 1.45V at 10A and negligible reverse recovery time (0 ns), characteristic of SiC Schottky technology. Ideal for high-frequency switching applications, it offers excellent thermal performance with an operating junction temperature range of -40°C to 175°C. The reverse leakage current is rated at 130 µA at 650 V, with a capacitance of 670pF at 0V and 1MHz. This device is commonly utilized in power factor correction, automotive power supplies, solar inverters, and industrial power systems. Supplied in Tape & Reel packaging.
Additional Information
Series: ECOPACK®2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 670pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Current - Reverse Leakage @ Vr | 130 µA @ 650 V |
Request a Quote
Clients Also Buy
STPSC20065GY-TR
DIODE SIL CARBIDE 650V 20A D2PAK
STPSC20H12GY-TR
DIODE SIL CARB 1.2KV 20A D2PAK
STPSC20H12WL
DIODE SIL CARB 1.2KV 20A DO247
