TRD136DT4
TRANS NPN 400V 3A DPAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics TRD136DT4 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This component features a 400V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 20W. It is housed in a surface-mount DPAK (TO-252-3) package, facilitating efficient board assembly. The transistor exhibits a minimum DC current gain (hFE) of 10 at an Ic of 2A and Vce of 5V. The saturation voltage (Vce(sat)) is specified at a maximum of 1V for an Ib of 500mA and Ic of 2A. Operating temperature range extends to 150°C (TJ). This device is suitable for use in power supply circuits, lighting control, and general-purpose switching applications. Supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 2A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 20 W |
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