Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

STX83003

Banner
productimage

STX83003

TRANS NPN 400V 1A TO92-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics STX83003 is an NPN bipolar junction transistor (BJT) designed for applications requiring high breakdown voltage. This component features a collector-emitter breakdown voltage of 400V and a continuous collector current capability of up to 1A. With a maximum power dissipation of 1.5W, it is suitable for moderate power handling. The specified DC current gain (hFE) is a minimum of 16 at 350mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 1V at 50mA base current and 350mA collector current. The STX83003 is housed in a TO-92-3 through-hole package, facilitating easy mounting. This device finds utility in various industrial control, power supply, and general-purpose switching applications. The maximum operating junction temperature is 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:
Technical Details:
PackagingBag
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 350mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce16 @ 350mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1.5 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STBV42G

TRANS NPN 400V 1A TO92-3

product image
2STR2160

TRANS PNP 60V 1A SOT23-3

product image
2STW4466

TRANS NPN 80V 6A TO247-3