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STX112-AP

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STX112-AP

TRANS NPN DARL 100V 2A TO92AP

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics NPN Darlington Transistor, Part Number STX112-AP, offers a 100V collector-emitter breakdown voltage and a continuous collector current of 2A. This device features a high DC current gain (hFE) of 1000 minimum at 1A, 4V, and a maximum collector-emitter saturation voltage of 2.5V at 8mA, 2A. With a maximum power dissipation of 1.2W, it is suitable for applications requiring moderate power switching and amplification. The STX112-AP is housed in a TO-92AP package with formed leads, designed for through-hole mounting. Its construction is ideal for use in automotive, industrial control, and consumer electronics power management circuits. The component is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Frequency - Transition-
Supplier Device PackageTO-92AP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.2 W

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