STN817A
TRANS PNP 80V 1.5A SOT223Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics STN817A is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1.5A. The DC current gain (hFE) is a minimum of 30 at 1A collector current and 2V collector-emitter voltage. With a transition frequency of 50MHz and maximum power dissipation of 1.6W, the STN817A is suitable for use in consumer electronics and industrial control systems. It is supplied in a SOT-223 surface-mount package, presented on tape and reel. The specified saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA base current and 1A collector current. Operating temperature range is from -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1A, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.6 W |
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