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STL128DN

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STL128DN

TRANS NPN 400V 4A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics STL128DN NPN Bipolar Junction Transistor. This component features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 4A, with a maximum power dissipation of 60W. The transistor is housed in a TO-220 package, suitable for through-hole mounting. Key specifications include a saturation voltage of 1V at 400mA/2A and a minimum DC current gain (hFE) of 10 at 10mA/5V. The collector cutoff current is rated at a maximum of 250µA. This device is utilized in applications within the industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 2A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max60 W

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