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STBV45G-AP

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STBV45G-AP

TRANS NPN 400V 0.75A TO92AP

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics STBV45G-AP is an NPN bipolar junction transistor designed for general-purpose applications. This through-hole component, packaged in a TO-92AP (TO-226-3, TO-92-3) package, offers a collector-emitter breakdown voltage of 400V and a continuous collector current capability of up to 750mA. With a maximum power dissipation of 950mW and an operating junction temperature of 150°C, the STBV45G-AP exhibits a minimum DC current gain (hFE) of 5 at 400mA and 5V. The saturation voltage (Vce Saturation) is specified at a maximum of 1.5V at 135mA collector current and 400mA base current. This device is commonly found in power supply circuits and general switching applications across various industrial sectors. The component is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 135mA, 400mA
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 400mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92AP
Current - Collector (Ic) (Max)750 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max950 mW

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