STBV45-AP
TRANS NPN 400V 0.75A TO92APManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number STBV45-AP, is designed for applications requiring high voltage switching. This through-hole component features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 750mA. The device exhibits a minimum DC current gain (hFE) of 5 at 400mA and 5V. Its collector-emitter saturation voltage (Vce) is a maximum of 1.5V at 135mA base current and 400mA collector current. The transistor is rated for a maximum power dissipation of 950mW and operates at junction temperatures up to 150°C. Supplied in a TO-92AP (TO-226-3) package via Tape & Box (TB) packaging, this component is suitable for use in power supply regulation and general-purpose high-voltage switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 135mA, 400mA |
| Current - Collector Cutoff (Max) | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 400mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92AP |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 950 mW |
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