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STBV45

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STBV45

TRANS NPN 400V 0.75A TO92-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics STBV45 is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This component features a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 750mA. With a maximum power dissipation of 950mW, it is suitable for use in the TO-92-3 through-hole package. The device exhibits a minimum DC current gain (hFE) of 5 at 400mA and 5V. Saturation voltage (Vce(sat)) is specified at 1.5V maximum for a base current of 135mA and collector current of 400mA. The STBV45 is utilized in power supply circuits, lighting control, and general-purpose amplification in industrial and consumer electronics. The device operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 135mA, 400mA
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 400mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)750 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max950 mW

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