STBV42G-AP
TRANS NPN 400V 1A TO92APManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics STBV42G-AP is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This component offers a collector-emitter breakdown voltage of 400V and can handle a continuous collector current of up to 1A. With a maximum power dissipation of 1W, it is supplied in a TO-92AP package, suitable for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 10 at 400mA collector current and 5V collector-emitter voltage. Key parameters include a Vce(sat) of 1.5V at 250mA base current and 750mA collector current, and a collector cutoff current of 1mA. This transistor is commonly utilized in power supply circuits, lighting control, and general-purpose switching applications. The component is provided in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 750mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 400mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92AP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
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