STBV42G
TRANS NPN 400V 1A TO92-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics STBV42G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 1 Ampere and a collector-emitter breakdown voltage (Vce) of 400 Volts. It offers a minimum DC current gain (hFE) of 10 at 400mA and 5V, with a Vce(sat) of 1.5V at 250mA and 750mA. The device has a maximum power dissipation of 1 Watt and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a standard TO-92-3 (TO-226-3) format, the STBV42G is suitable for use in industrial control systems, power supply units, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 750mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 400mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
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