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STB13005-1

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STB13005-1

TRANS NPN 400V 4A I2PAK

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics STB13005-1 NPN Bipolar Junction Transistor designed for high-voltage applications. This device features a 400V collector-emitter breakdown voltage and a continuous collector current capability of 4A. With a maximum power dissipation of 75W and a Vce(sat) of 1V at 4A collector current and 1A base current, it offers efficient switching performance. The minimum DC current gain (hFE) is 8 at 2A collector current and 5V Vce. Packaged in a TO-262 (I2PAK) with long leads, this through-hole component is suitable for power supply circuits, lighting ballasts, and general-purpose switching applications. Operating temperature range is up to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageTO-262 (I2PAK)
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max75 W

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