STB13005-1
TRANS NPN 400V 4A I2PAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics STB13005-1 NPN Bipolar Junction Transistor designed for high-voltage applications. This device features a 400V collector-emitter breakdown voltage and a continuous collector current capability of 4A. With a maximum power dissipation of 75W and a Vce(sat) of 1V at 4A collector current and 1A base current, it offers efficient switching performance. The minimum DC current gain (hFE) is 8 at 2A collector current and 5V Vce. Packaged in a TO-262 (I2PAK) with long leads, this through-hole component is suitable for power supply circuits, lighting ballasts, and general-purpose switching applications. Operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-262 (I2PAK) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 75 W |
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